MMBT2222A vishay semiconductors formerly general semiconductor document number 88222 www.vishay.com 10-may-02 1 new product small signal transistor (npn) features ?npn silicon epitaxial planar transistor for switching and amplifier applications. ?this transistor is also available in the to-92 case with the type designation mps2222a. maximum ratings & thermal characteristics ratings at 25 c ambient temperature unless otherwise specified. parameter symbol value unit collector-base voltage v cbo 75 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current i c 600 ma power dissipation on fr-5 board (1) t a = 25 c p tot 225 mw derate above 25 c 1.8 mw/ c power dissipation on alumina substrate (2) t a = 25 c p tot 300 mw derate above 25 c 2.4 mw/ c thermal resistance junction fr-5 board r ja 556 c/w to ambient air alumina substrate 417 junction temperature t j 150 c storage temperature range t s 55 to +150 c notes: (1) fr-5 = 1.0 x 0.75 x 0.062 in. (2) alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. mechanical data case: sot-23 plastic package weight: approx. 0.008g marking code: 1p packaging codes/options: e8/10k per 13 reel (8mm tape), 30k/box e9/3k per 7 reel (8mm tape), 30k/box .016 (0.4) .056 (1.43 ) .037(0.95) .037(0.95) max. .004 (0.1) .122 (3.1) .016 (0.4) .016 (0.4) 1 2 3 top view .102 (2.6) .007 (0.175) .045 (1.15) .110 (2.8) .052 (1.33 ) .005 (0.125) .094 (2.4) .037 (0.95) to-236ab (sot-23) dimensions in inches and (millimeters) pin configuration 1 = base 2 = emitter 3 = collector 0.079 (2.0) 0.037 (0.95) 0.035 (0.9) 0.031 (0.8) 0.037 (0.95) mounting pad layout
MMBT2222A vishay semiconductors formerly general semiconductor www.vishay.com document number 88222 2 10-may-02 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit v ce = 10 v, i c = 0.1 ma 35 v ce = 10 v, i c = 1 ma 50 v ce = 10 v, i c = 10 ma 75 dc current gain h fe v ce = 10 v, i c = 10 ma 35 t a = -55 c v ce = 10 v, i c = 150 ma (1) 100 300 v ce = 10 v, i c = 500 ma (1) 40 v ce = 1.0 v, i c = 150 ma (1) 50 collector-base breakdown voltage v (br)cbo i c = 10 a, i e = 0 75 v collector-emitter breakdown voltage (1) v (br)ceo i c = 10 ma, i b = 0 40 v emitter-base breakdown voltage v (br)ebo i c = 10 a, i c = 0 6.0 v collector-emitter saturation voltage (1) v cesat i c = 150 ma, i b = 15 ma 0.3 v i c = 500 ma, i b = 50 ma 1.0 base-emitter saturation voltage (1) v besat i c = 150 ma, i b = 15 ma 0.6 1.2 v i c = 500 ma, i b = 50 ma 2.0 collector cut-off current i cex v eb = 3 v, v ce = 60 v 10 na v cb = 60 v, i e = 0 10 na collector cut-off current i cbo v cb = 50 v, i e = 0 v 10 a t a = 125 c base cut-off current i bl v eb = 3 v, v ce = 60 v 20 na emitter cut-off current i ebo v eb = 3 v dc , i c = 0 100 na current gain-bandwidth product f t v ce = 20 v, i c = 20 ma 300 mhz f = 100 mhz output capacitance c obo v cb = 10 v, f = 1 mhz, i e = 0 8pf input capacitance c ibo v eb = 0.5 v, f = 1 mhz, i c = 0 25 pf noise figure nf v ce =10v, i c = 100 a, 4.0 db r s =1 k ? , f = 1 khz v ce = 10 v, i c = 1 ma 2 8.0 input impedance h ie f = 1 khz k ? v ce = 10 v, i c = 10 ma 0.25 1.25 f = 1 khz v ce = 10 v, i c = 1 ma, 50 300 small signal current gain h fe f = 1 khz v ce = 10 v, i c = 10 ma, 75 375 f = 1 khz voltage feedback ratio h re v ce = 10 v, i c = 1 ma, 50 300 f = 1 khz 75 375 v ce = 10 v, i c = 1 ma, 5.0 35 output admittance h oe f = 1 khz s v ce = 10 v, i c = 10 ma, 25 200 f = 1 khz note: (1) pulse test: pulse width 300 s - duty cycle 2%
MMBT2222A vishay semiconductors formerly general semiconductor document number 88222 www.vishay.com 10-may-02 3 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit collector base time constant r b c c i e = 20 ma, v cb = 20 v, 150 ps f = 31.8 mhz delay time (see fig. 1) t d i b1 = 15 ma, i c = 150 ma, 10 ns v cc = 30v, v be = -0.5 v rise time (see fig. 1) t r i b1 = 15 ma, i c = 150 ma, 25 ns v cc = 30v, v be = -0.5 v storage time (see fig. 2) t s i b1 = i b2 = 15 ma, 225 ns i c = 150 ma, v cc = 30v fall time (see fig. 2) t f i b1 = i b2 = 15 ma, 60 ns i c = 150 ma, v cc = 30v < 2 ns 0 c * < 10 pf s 200 ? 1.0 to 100 s, duty cycle 2% +30v +16 v -2 v 1k ? scope rise time < 4ns *total shunt capacitance of test jig, connectors and oscilloscope switching time equivalent test circuit figure 1. turn-on time figure 2. turn-off time 200 ? +30v -4 v c < 10 pf s * 1.0 to 100 s, duty cycle 2% 1k ? < 20 ns 0 +16 v -14 v
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